Quantum Band Structure Engineering of InGaN/GaN Heterostructure Quantum Well under External Magnetic Fields

Omar.A.Gadaan

doi:10.71229/dw7v3s66

Authors

Omar.A.Gadaan Tikrit University - College of Education for Pure Sciences https://orcid.org/0009-0004-2420-7230

DOI:

https://doi.org/10.71229/dw7v3s66

Keywords:

InGaN/GaN, , magnetic fields, , Landau quantization,, Schrödinger Poisson, , electron density

Abstract

Using a two-dimensional Schrödinger–Poisson model at T = 300 K, the quantum band structure of InGaN/GaN quantum wells under the influence of magnetic fields was investigated. According to the findings, the ground-level energy levels decreased from roughly 0.35 eV to 0.08 eV when the indium content was increased from 10% to 20% or the well thickness was increased from 2 to 4 nm. The upper levels also decreased in a comparable manner. When a magnetic field is applied up to 10 Tesla, the Landau shift is up to 0.01-0.02 eV. The electron density distribution was mainly just inside the quantum well, and so the Poisson potential has some effect on energy levels. This finding is also supported by our previous studies of InGaN/GaN quantum wells. A distinct relationship between material characteristic, quantum structure and spectral shifts.

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